Ion Beam synthesis of semiconductor nanocrystals for Si technology devices

In this paper, we present the synthesis and the detailed characterisation o f elemental and compound semiconducting nanoparticles ion beam synthesised in SiO2. In the case of Si nanoparticles, a systematic study has been devel oped in order to make the link between the characteristics of the precipita tes and the optical properties. Ge nanoparticles, which emission is weak bu t having a strong contrast in Transmission Electron Microscopy, have been f abricated in order to develop a new method of precipitate density measureme nt. On the other hand, ZnS nanocrystals doped with Mn have been synthesised for the first time with this technique and show a PL emission centred at 2 .12 eV, characteristics of an intra-Mn transition. Moreover, the first opti cal results of Si+ and C+ co-implanted layers are presented here and show t hree PL emissions, linked to the presence of three different types of nanop articles. The simultaneous emission of these three peaks has allowed the ob servation of an intense white light.