Determination of kinetic parameters by means the calorimetric technique ofsingle-scan. Application to the non-isothermal crystallization of the Sb0.12As0.40Se0.48 alloy

A procedure has been developed for analyzing the evolution with time of the crystallized fraction and for calculating the kinetic parameters at non-is othermal reactions involving formation and growth of nuclei. Considering th e assumptions of extended volume and random nucleation, a general expressio n of the transformed fraction as a function of time has been obtained in is othermal crystallization processes. The crystallization rate deduced has be en applied to the non-isothermal processes under the restriction of a nucle ation which takes place early in the transformation and the nucleation freq uency is zero thereafter. In these conditions, the kinetic parameters have been deduced by using the technique of single-scan. The theoretical method developed has been applied to the crystallization kinetics of the semicondu cting Sb0.12As0.40Se0.48 alloy. The kinetic parameters obtained differ by o nly about 6% of those calculated by multiple-scan techniques, which confirm s the reliability and accuracy of the single-scan technique when calculatin g the mentioned parameters in non-isothermal processes.