High frequency and magnetoelectrical properties of magnetoresistive memoryelement based on FeCoNi/TiN/FeCoNi film

A miniaturised memory device for information recording and readout processe s have been designed on the basis of anisotropic magnetoresistive effect in Fe15Co20Ni65(160 Angstrom) / TiN(50 Angstrom)/ Fe15Co20Ni65(160 Angstrom) three-layered film done by rf diode sputtering. Stable recording and readou t processes were available for 32 rectangular element column, where each el ement had mu m dimensions convenient to fabricate memory chip with 10(6) bi ts capacity. Rectangles of different sizes with removed corners were used i n order to define the geometry of most of all stable recording and readout processes. Magnetoresistance and magnetoimpedance effects of a magnetic mem ory device have been comparatively analysed. We suggest that the decrease o f the absolute value of the magnetoimpedance of the memory device comes fro m the reduction of the real part via the magnetoresistance.