Ac conduction in Al/Sb2Pb1Se7/Al devices

Authors
Wagle, S Shirodkar, V
Citation
S. Wagle et V. Shirodkar, Ac conduction in Al/Sb2Pb1Se7/Al devices, CZEC J PHYS, 50(7), 2000, pp. 829-839
Citations number
23
Categorie Soggetti
Physics
Journal title
CZECHOSLOVAK JOURNAL OF PHYSICS
ISSN journal
00114626 → ACNP
Volume
50
Issue
7
Year of publication
2000
Pages
829 - 839
Database
ISI
SICI code
0011-4626(200007)50:7<829:ACIAD>2.0.ZU;2-0
Abstract
Metal-glass-metal (MGM) thin film devices are prepared using vacuum deposit ion of Sb2Pb1Se7 compound. The variation of ac conductance as a function of thickness of films, temperature and frequency is studied. The observed cha racteristics are explained on the basis of Co-related Barrier Hopping (CBH) of bipolaron. It is shown that the theoretical curve generated using the f irst order approximation gives excellent fitting with the experimental curv e.