Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor

Authors
Jung, JW Roh, JS Lee, YJ Lee, KH
Citation
Jw. Jung et al., Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor, IEEE ELEC D, 21(8), 2000, pp. 376-377
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
21
Issue
8
Year of publication
2000
Pages
376 - 377
Database
ISI
SICI code
0741-3106(200008)21:8<376:TRTA(T>2.0.ZU;2-S
Abstract
We examined effects of source/drain annealing condition on the gate sheet r esistance and short channel effect. We found that two-step rapid thermal an nealing (TS-RTA) technology, where 700 degrees C, 3 min pre-annealing in O- 2 is introduced before 1000 degrees C anneal in N-2, suppressed dopant out- diffusion without degrading short channel effect of transistor.