A highly reliable GaInAs-GaInP 0.98-mu m window laser

Citation
J. Hashimoto et al., A highly reliable GaInAs-GaInP 0.98-mu m window laser, IEEE J Q EL, 36(8), 2000, pp. 971-977
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
36
Issue
8
Year of publication
2000
Pages
971 - 977
Database
ISI
SICI code
0018-9197(200008)36:8<971:AHRG0M>2.0.ZU;2-T
Abstract
A novel window structure realized by selective N ion implantation and subse quent rapid thermal annealing has been applied to overcome the catastrophic optical damage (COD) of a GaInAs-GaInP laser emitting in the 0.98-mu m wav elength region. A kink-free output power up to 220 mW at 25 degrees C was o btained. Laser characteristics including the I-L, far-field pattern, and la sing spectrum were almost the same as those of a conventional nonwindow las er consisting of the same structure except for the window region. In a 50 d egrees C, APC-150mW aging test, the window lasers have operated stably beyo nd 16 000 h, and no damage has been observed. Under this aging condition, a median lifetime of 280 000 h was obtained from log-normal plotting of agin g characteristics. This marked improvement in reliability is due to a remar kable increase of damage tolerance realized by the window structure, In add ition, there was minimal change in the characteristic of the window laser d uring the aging, indicating the absence of serious inner degradation. These results clearly show that our 0.98-mu m window laser suppresses both COD f ailure and inner degradation satisfactorily and can be used in practical ap plications.