Low-voltage C-band SiBJT single-chip receiver MMIC based on Si 3-D MMIC technology

This letter demonstrates a C-band Si BJT MMIC single-chip receiver based on the masterslice 3-D MMIC technology. The fabricated receiver MMIC on a chi p of 1.8 mm by 1.8 mm integrates a low-noise amplifier, an image-rejection mixer, and an IF hybrid associated with an IF amplifier. The fabricated com ponents on the chip are designed by using reactive matching method due to b oth broadband and low-voltage operation. The receiver MMIC achieves a conve rsion gain of 13.5 dB, a noise figure of 5.2 dB, and an image rejection rat io of 30.5 dB at 5.2 GHz, This receiver also has a flat gain characteristic in the C-band, The power consumption of this MMIC is 115 mW with 2 V colle ctor supply voltage.