Two types of InGaAs-GaAs-AlGaAs complex-coupled distributed feedback laser
structures grown by molecular beam epitaxy are compared. The first structur
e uses interrupted quantum wells (QW's) grown over a grating. Its propertie
s strongly depend on the interface cleaning resulting in nonreproducible th
reshold current densities. The second structure includes three uniform QW's
, the gain coupling being induced by the vertical radiation of second order
grating. This last structure has reproducible, low continuous wave thresho
ld current densities (j(th) = 300 A/cm(2)), The coupling strength and its o
rigin are described for the two structures. Both structures have high mono-
mode yield (>75%) and side-mode suppression ratios larger than 40 dB.