Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

Authors
Murakami, I Nakano, T Hatano, K Nakashiba, Y Furumiya, M Nagata, T Kawasaki, T Utsumi, H Uchiya, S Arai, K Mutoh, N Kohno, A Teranishi, N Hokari, Y
Citation
I. Murakami et al., Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors, IEEE DEVICE, 47(8), 2000, pp. 1566-1572
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
8
Year of publication
2000
Pages
1566 - 1572
Database
ISI
SICI code
0018-9383(200008)47:8<1566:TTIPAR>2.0.ZU;2-T
Abstract
New technologies to increase the photo-sensitivity and I-educe the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD i mage sensors. The photo-sensitivity was increased 40% by forming an anti-re flection film over the photo-diode and reducing the thickness of the p(+)-l aver formed at the photo-diode surface, The VOD shutter voltage was reduced from 31 to 18 V bg using an epitaxially grown substrate with double impuri ty concentration layers.