A comparative study of gate direct tunneling and drain leakage currents inN-MOSFET's with sub-2-nm gate oxides

This work examines different components of leakage current in scaled n-MOSF ET's with ultrathin gate oxides (1.4-2.0 nm), Both gate direct tunneling an d drain leakage currents are studied by theoretical modeling and experiment s, and their effects on the drain current are investigated and compared. It concludes that the source and drain extension to the gate overlap regions have strong effects on device performance in terms of gate tunneling and of f-state drain currents.