Frequency domain lifetime characterization

Time-based measurements are commonly used for lifetime characterization of semiconductors. We have developed the theory; verified by experiment, of fr equency-based lifetime characterization as an alternative to time-based mea surements for MOS devices biased in inversion, One consideration during lif etime/diffusion length measurements, is whether the near-surface space-char ge region or the bulk or quasineutral region is characterized. To character ize the near-surface space-charge region of the three, one usually makes ro om temperature pulsed MOS capacitor or diode leakage current measurements, We show that room-temperature, frequency-domain capacitance, conductance, o r resistance measurements characterize the quasineutral bulk, not the space -charge region, in contrast to room-temperature pulsed MOS-C or diode leaka ge curl ent measurements which characterize the space charge region.