Forward gated-diode measurement of filled traps in high-field stressed thin oxides

The forward gated-diode monitoring technique can find its potential applica tions in assessing the filled traps in MOSFET thin oxides, which are subjec ted to high-field stressing and then followed by hot-electrons filling sche me. Our measurement of the gate voltage shift associated with the forward c urrent peak produces a power lan relation between the filled trap density a nd the electron stress fluence, indeed in close agreement with that obtaine d by MOSFET threshold voltage shift.