Effect of synthetic impurities on photocarrier transport in poly (3-hexylthiophene)

Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3 HT/Al sandwich cell configuration has been investigated by means of Time-of -Flight technique. Characteristics of Schottky diode and the magnitude of h ole mobility have been found to be affected by impurities involved during t he synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4 x 10(-5) and 2.6 x 10(-4) cm(2)/V.s before and af ter the removal of ferric ions, respectively, at a held of 5.0 x 10(5) V/cm . Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.