C-S thin films formed by plasma CVD

Thin Films of carbon (C)-sulfur (S) compound were formed by plasma CVD (PCV D) at the special chemical condition. The reactor has a parallel plate elec trode system and was operated at a discharge frequency of 13.56 MHz with us ing a mixture gas of argon (Ar), methane (CH4) and SF6. The deposition was performed on a substrate placed on the grounded electrode. Atomic compositi on of the film was observed to depend on the gas mixture ratio. The sulfur atom density was increased up to 30% with using a mixture gas at a pressure of 0.1 Torr and at a flow rate of 20, 20 and 50 SCCM for Ar, CH4 and SF6, respectively. It was expected that the C-S compounds were deposited under t he condition of F atom elimination by forming HF.