PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM-WELL WIRES

Authors
SALI A FLIYOU M LOUMRHARI H
Citation
A. Sali et al., PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM-WELL WIRES, Physica. B, Condensed matter, 233(2-3), 1997, pp. 196-200
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
233
Issue
2-3
Year of publication
1997
Pages
196 - 200
Database
ISI
SICI code
0921-4526(1997)233:2-3<196:POSDII>2.0.ZU;2-D
Abstract
The photon energy dependence of the photoionization cross-sections are calculated for a hydrogenic shallow impurity located in quantum-well wires of GaAs, surrounded by Ga1-xAlxAs as a function of the sizes of the wire for several values of the heights of the potential barriers. The results we have obtained show that the photoionization cross-secti ons are affected by the sizes of the wire and the height of the barrie r and also that their magnitude are larger than those in comparable in finite potential quantum-well wires.