Diode-pumped broadband vertical external cavity surface emitting semiconductor lasers. Application to high sensitivity intracavity absorption spectroscopy

Authors
Garnache, A Kachanov, AA Soeckel, F Planel, R Thierry-Mieg, V Houdre, R
Citation
A. Garnache et al., Diode-pumped broadband vertical external cavity surface emitting semiconductor lasers. Application to high sensitivity intracavity absorption spectroscopy, J PHYS IV, 10(P8), 2000, pp. 203-205
Citations number
10
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
10
Issue
P8
Year of publication
2000
Pages
203 - 205
Database
ISI
SICI code
1155-4339(200005)10:P8<203:DBVECS>2.0.ZU;2-G
Abstract
We report the demonstration of high sensitivity Intra-Cavity-Absorption-Spe ctroscopy employing a newly developed diode-pumped broadband Vertical-Exter nal-Cavity Surface-Emitting semiconductor Laser. A detection limit lower th an 10(-10) /cm has been achieved. The threshold was 50-100 mW at room tempe rature in cw operation and the laser was broadly tunable over 75-nm near 10 00-nm.