The temperature dependence of conductivity of highly disordered quasi-two-dimensional metal-insulator-semiconductor structures under conditions of quantization of conductance

Measurements are performed of the dependence of the conductivity of two-dim ensional electron gas in short-channel metal-insulator-semiconductor (MIS) structures with a high fluctuation potential on the electron density, as we ll as of the temperature dependence of the conductivity of such structures. The conductivity of these structures in the region of weak inversion is ex ponentially dependent on temperature; however, the value of preexponential function does not coincide with the predicted value equal to 2e(2)/h. It is suggested that the observed anomalies are associated with the special stru cture of the saddle-point regions of the fluctuation potential.