Study of field electron emission from nanocrystalline diamond thin films grown from a N-2/CH4 microwave plasma

Citation
Ns. Xu et al., Study of field electron emission from nanocrystalline diamond thin films grown from a N-2/CH4 microwave plasma, J PHYS D, 33(13), 2000, pp. 1572-1575
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
33
Issue
13
Year of publication
2000
Pages
1572 - 1575
Database
ISI
SICI code
0022-3727(20000707)33:13<1572:SOFEEF>2.0.ZU;2-9
Abstract
Nitrogen containing nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapour deposition using N-2/CH4 as the r eactant gas. The films prepared under different N-2/CH4 flow ratios were st udied by scanning electron microscopy, transmission electron microscopy, x- ray diffraction and secondary ion mass spectroscopy. Their field emission c haracteristics, i.e. both the distribution of the emission sites and curren t-voltage characteristics, were recorded using a transparent anode techniqu e. It was found that the grain size of films prepared under different condi tions varies and has a relationship with their turn-on fields. A possible e xplanation is given, which proposes that nanocrystalline boundary induced d efect states might affect the field emission characteristics.