The stability of polystyrene (PS) films on silicon oxide is improved by ble
nding with poly-(styrene-block-methyl methacrylate) (PS-b-PMMA) having a sh
ort, adsorbing MMA block and long, dangling PS block (degree of polymerizat
ion N). Relative to PS (degree of polymerization P), hole growth velocity d
ecreases by 5 and 17 times upon adding 0.05 volume fraction of PS-b-PMMA (p
hi) for N similar to P and N similar to 4P, respectively. In contrast to PS
, holes approach a constant value and do not coalesce. The N similar to 4P
system provides better stabilization because of its broader interfacial wid
th. For N similar to P, hole velocity decreases as phi increases and then b
ecomes constant for phi > 0.03. Relative to blends, holes grow faster in bi
layers and eventually coalesce. AFM analysis shows that the PS hole floor i
s smooth whereas the blend floor contains patches. The film stabilizing eff
ect of block copolymers can be attributed to a decrease in capillary drivin
g force, entanglements at the matrix/copolymer interface, and brush graftin
g density.