Modeling HEMT intermodulation distortion characteristics

Authors
Citation
G. Qu et Ae. Parker, Modeling HEMT intermodulation distortion characteristics, MICROELEC J, 31(7), 2000, pp. 493-496
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
31
Issue
7
Year of publication
2000
Pages
493 - 496
Database
ISI
SICI code
0026-2692(200007)31:7<493:MHIDC>2.0.ZU;2-H
Abstract
The significance of the nonlinearity of HEMT capacitance models to the pred iction of intermodulation is investigated. Three capacitance models, one li near and two with contrasting nonlinear behavior, are shown to exhibit almo st identical performance. It is concluded that the nonlinearity of the low- frequency model is the dominant distortion generating component. Developmen t of capacitance models with accurate high-order derivatives is unwarranted without an accurate de model. Therefore, careful characterization of the d rain current description is most important for the successful circuit simul ation. (C) 2000 Elsevier Science Ltd. All rights reserved.