Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

We have investigated the electronic structure of the conduction band states in InAs quantum boxes embedded in GaAs. Using cross-sectional scanning tun neling microscopy and spectroscopy, we report the direct observation of sta nding wave patterns in the boxes at room temperature. Electronic structure calculation of similar cleaved boxes allows the identification of the stand ing waves pattern as the probability density of the ground and first excite d states. Their spatial distribution in the (001) plane is significantly af fected by the strain relaxation due to the cleavage of the boxes.