Study on phase diagram of Bi2O3-SiO2 system for Bridgman growth of Bi4Si3O12 single crystal

Citation
Yt. Fei et al., Study on phase diagram of Bi2O3-SiO2 system for Bridgman growth of Bi4Si3O12 single crystal, PROG CRYST, 40(1-4), 2000, pp. 183-188
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
ISSN journal
09608974 → ACNP
Volume
40
Issue
1-4
Year of publication
2000
Pages
183 - 188
Database
ISI
SICI code
0960-8974(2000)40:1-4<183:SOPDOB>2.0.ZU;2-5
Abstract
Phase relation of Bi2O3-SiO2 system was evaluated experimentally from DTA a nd XRD measurements and its stable and metastable phase diagrams were propo sed. Although BSO melts near-congruently at 1025 degrees C in the stable ph ase equilibrium its melt crystallizes to form metastable phase Bi2SiO5 in a ccordance with the metastable phase diagram while cooling Therefore, BSO co uldn't nucleate and crystallize spontaneously without crystal seed and only Bi2SiO5 crystallized at about 850 degrees C with significant supercooling during Bridgman growth. BSO single crystal with 20x20x100mm(3) was grown in a vertical Bridgman furnace with a BSO seed according to its phase diagram The measuring results of scintillation properties of BSO specimen show tha t its decay constant is 91 ns (about 1/3 of EGO) and light output is 23% of EGO.