Bridgman growth of Bi4Si3O12 scintillation crystals and doped effects on radiation resistance

Authors
Fei, YT Fan, SJ Sun, RY Xu, JY Ishii, M
Citation
Yt. Fei et al., Bridgman growth of Bi4Si3O12 scintillation crystals and doped effects on radiation resistance, PROG CRYST, 40(1-4), 2000, pp. 189-194
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
ISSN journal
09608974 → ACNP
Volume
40
Issue
1-4
Year of publication
2000
Pages
189 - 194
Database
ISI
SICI code
0960-8974(2000)40:1-4<189:BGOBSC>2.0.ZU;2-3
Abstract
Ce, Nd and Eu doped BSO crystals 20x20x100mm(3) in size have been grown by vertical Bridgman method, and the doped effects on radiation resistance of BSO have also been studied for the first time. Nd and Eu dopings were found to improve the radiation resistance of BSO. However. Ce and Nd dopings deg rade the light output of BSO except that Eu doping has almost no effect on it. Therefore. Eu may be the most promising dopant candidate for improving the scintillation properties of BSO crystal.