Growth kinetics on the (100) and (001) faces of TGS crystals

Citation
Dl. Sun et al., Growth kinetics on the (100) and (001) faces of TGS crystals, PROG CRYST, 40(1-4), 2000, pp. 227-233
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
ISSN journal
09608974 → ACNP
Volume
40
Issue
1-4
Year of publication
2000
Pages
227 - 233
Database
ISI
SICI code
0960-8974(2000)40:1-4<227:GKOT(A>2.0.ZU;2-N
Abstract
The growth kinetics and mechanisms on the (001) and (100) faces of TGS crys tals were investigated. A phase contrast microscope with a CCD camera was u sed to observe the growth of the crystal. We found the growth on the (001) and (100) faces at high supersaturation was mainly controlled by a BCF surf ace diffusion mechanism. The kinetic data for the (100) face were also fitt ed by the nucleation and layer growth model of two-dimension nucleation at high supersaturation. Some important growth parameters for TGS crystals, su ch as edge energy, activation energy, and so on, were estimated.