Room temperature sensitivity of (SnB2-ZrO2) sol-gel thin films

Authors
Citation
Ms. Selim, Room temperature sensitivity of (SnB2-ZrO2) sol-gel thin films, SENS ACTU-A, 84(1-2), 2000, pp. 76-80
Citations number
19
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
84
Issue
1-2
Year of publication
2000
Pages
76 - 80
Database
ISI
SICI code
0924-4247(20000801)84:1-2<76:RTSO(S>2.0.ZU;2-C
Abstract
Room temperature (H2S) gas detector of pure and doped tin oxide films were prepared by the sol-gel method. X-ray diffraction (XRD) and Scanning Electr on Microscope (SEM) have studied the microstructure of these films. It reve aled that the as-prepared films show amorphous structure and ultra-fine gra ins. The heat-treated films (773 K, 10 K/min), show a strong peak (101) bes ides the grains are oriented over the film surface. The room temperature se nsitivity of the films of H2S gas was detected, a fast response < 10 s, hig h sensitivity 99% and low recovery < 5 min. The coated films with tetraethy lorthosilicate (TEOS) show, a fast response < 10 s, high sensitivity 98%, l ong recovery > 5 min and long age with high efficiency and reproducibility. Some models of detectors with different shapes and the electrical circuit were designed to detect H2S gas with high efficiency. (C) 2000 Elsevier Sci ence S.A. All rights reserved.