Stress analysis at singular points of micromachined silicon membranes

Citation
A. Chouaf et al., Stress analysis at singular points of micromachined silicon membranes, SENS ACTU-A, 84(1-2), 2000, pp. 109-115
Citations number
15
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
84
Issue
1-2
Year of publication
2000
Pages
109 - 115
Database
ISI
SICI code
0924-4247(20000801)84:1-2<109:SAASPO>2.0.ZU;2-8
Abstract
From 3D Finite Element simulations of square silicon micromachined membrane , we know that stress singularities are located close to the membrane media n Lines. As 3D simulations do not reach a sufficient level of accuracy to d escribe singularity behaviour, we use an iterative method to calculate the stress field components in the immediate vicinity of the singularity with m ore precision. However, this implies a reliable knowledge of the stress fie ld in the surrounding of the singularity as a Limiting condition. This was achieved through the development of a 2D axisymmetric Finite Element model (FEM) with a refined meshing around the singularity. The consistency of the results of the 3D and 2D model is discussed with regards to the descriptio n of the membrane behavior in both cases. Finally, the singular stress held is described numerically and its ability to raise up the local stress fiel d is discussed in terms of crack initiation mechanisms. (C) 2000 Elsevier S cience S.A. All rights reserved.