Tuning of surface boundary conditions for the 3D simulation of gated heterostructures

Authors
Iannaccone, G Macucci, M Amirante, E Jin, Y Lanois, H Vieu, C
Citation
G. Iannaccone et al., Tuning of surface boundary conditions for the 3D simulation of gated heterostructures, SUPERLATT M, 27(5-6), 2000, pp. 369-372
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
27
Issue
5-6
Year of publication
2000
Pages
369 - 372
Database
ISI
SICI code
0749-6036(200005/06)27:5-6<369:TOSBCF>2.0.ZU;2-A
Abstract
We propose a method for treating the boundary conditions at the exposed sur face of semiconductor nanostructures, and compare the results from simulati ons based on such a method with experimental measurements on test devices d efined electrostatically by metal gates on AlGaAs/GaAs heterostructures. In particular, we show that the pinch-off voltage of quantum point contacts r ealized with split gates can be reasonably reproduced, provided the lithogr aphic gap is small enough. (C) 2000 Academic Press.