Effect of single-electron interface trapping in decanano MOSFETs: A 3D atomistic simulation study

We study the effect of trapping/detrapping of a single-electron in interfac e states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependenc ies, the simulations are carried out initially assuming continuous doping c harge, and discrete localized charge only for the trapped electron. The dep endence of the random telegraph signal (RTS) amplitudes on the device dimen sions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete ch arge for both randomly placed dopants and the trapped electron, we highligh t the importance of current percolation and of traps with strategic positio n where the trapped electron blocks a dominant current path. (C) 2000 Acade mic Press.