Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress

We explore the hydrogen-related microstructures involved in hot electron de fect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor fi eld effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for hydrogen-related degradation may be considerably lower than t he previously assumed value of 3.6 eV. Also, hydrogen atoms released from S i-H bonds at the interface by hot electron stress are trapped in bulk silic on near the interface. (C) 2000 Academic Press.