Electron-beam exposure of self-assembled monolayers of 10-undecenoic acid

Citation
Mn. Kozicki et al., Electron-beam exposure of self-assembled monolayers of 10-undecenoic acid, SUPERLATT M, 27(5-6), 2000, pp. 481-484
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
27
Issue
5-6
Year of publication
2000
Pages
481 - 484
Database
ISI
SICI code
0749-6036(200005/06)27:5-6<481:EEOSMO>2.0.ZU;2-9
Abstract
Tapping mode atomic force microscopy and capacitance versus voltage measure ments were employed to study the effects of electron-beam exposure on self- assembled monolayers of 10-undecenoic acid. It was established that exposur e increases chemical/mechanical stability, resulting in a thicker layer fol lowing a solvent treatment designed to remove residual monomers. Electron e xposure also reduces the effects of pinholes in the monolayer, thereby impr oving dielectric quality. (C) 2000 Academic Press.