Nanoscale effects in devices based on chalcogenide solid solutions

Solid solutions of metals such as silver in arsenic trisulfide exhibit a va riety of interesting characteristics, including the ability to bring che me tal out of solution by electrodeposition. This allows voltage-controlled sw itching characteristics to be realized in two terminal devices which may be fabricated to nanoscale dimensions. In addition, surface electrodeposits m ay be formed and subsequently broken at grain boundaries to create structur es that have adjustable current-voltage characteristics at low temperatures . This paper highlights some initial results of the characterization of nan oscale structures based on such solid solutions. (C) 2000 Academic Press.