Reduction in relaxation time due to ionized impurities in GaAs/AlGaAs quantum well structures

Time-resolved photoluminescence measurements in delta-doped GaAs/AlGaAs on the quantum well structures are performed to study effects of ionized impur ities relaxation process of photoexcited carriers. It is theoretically show n that a thin quantum well with a delta-doping layer inserted in the barrie r layer of double quantum wells enhances the impurity scattering rate signi ficantly. Photoluminescence decay time in the delta-doped samples is found to decrease compared with the undoped samples. (C) 2000 Academic Press.