sp3s* tight-binding parameters for transport simulations in compound semiconductors

A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight binding models for the nine binary compound semiconductors con sistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The acc uracy of the other bands is sacrificed for the better reproduction of the e ffective masses in the bands of interest. Relevant band edges are reproduce d to within a few meV and the effective masses deviate from the experimenta l values typically by less than 10%. (C) 2000 Academic Press.