Quantum mechanical Monte Carlo approach to electron transport at heterointerface

With the progress of LSI technology, the electronic device size is scaled d own to the sub 0.1 mu m region. In such an ultrasmall device, it is indispe nsable to take quantum mechanical effects into account in device modeling. In this paper, we present a newly developed quantum Monte Carlo device simu lation applicable to ultrasmall semiconductor devices. In this model, the q uantum effects are represented in terms of quantum mechanically corrected p otential in the classical Boltzmann equation. It is demonstrated that the q uantum transport effects such as tunneling and energy quantization in ultra small semiconductor devices are obtained for the first time by using the st andard Monte Carlo techniques. (C) 2000 Academic Press.