Resistively coupled single-electron transistor using tunnel gate resistor

Authors
Wakaya, F Nakamichi, S Gamo, K Mandai, S Iwabuchi, S
Citation
F. Wakaya et al., Resistively coupled single-electron transistor using tunnel gate resistor, SUPERLATT M, 27(5-6), 2000, pp. 603-606
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
27
Issue
5-6
Year of publication
2000
Pages
603 - 606
Database
ISI
SICI code
0749-6036(200005/06)27:5-6<603:RCSTUT>2.0.ZU;2-T
Abstract
A resistively coupled single-electron transistor (R-SET) was fabricated usi ng a modulation-doped heterostructure and metal Schottky gates, and measure d at low temperature. Currents of R-SET with tunnel gate resistor were calc ulated using the orthodox theory. It is shown that the R-SET with tunnel ga te resistor has quite similar properties to the originally proposed R-SET. (C) 2000 Academic Press.