A new preparation is reported which, for the first time, results in a thin,
crystalline SiO2 film on a Mo(112) single crystal. The procedure consists
of repeated cycles of silicon deposition and subsequent oxidation, followed
by a final annealing procedure. AES and XPS have been used to control film
stoichiometry. LEED pictures of high contrast show a hexagonal, crystallin
e SiO2 overlayer with a commensurate relationship to the Mo(112) substrate.
The wetting of the substrate by the film has been investigated by LEED, XP
S and TDS, revealing that the film covers the substrate completely.