Appllications of average-bond-energy method in strained-layer heterojunction band offset

We have extended the average-bond-energy method to the study of strained-la yer heterojunction band offset. Through a careful study of the effect of hy drostatic strain and uniaxial strain on band offset parameter E-mv, we find that the average band offset parameter E-mv,E-av( E-mv,E-av= E-m -E-v,E-av ) is largely kept unchanged under different strain conditions. So, in the c alculation of strained-layer band offset parameter E-mv, it is only require d the unstrained band offset parameter E-mv,E-0, a deformation parameter b and the experimental value of spin-orbit splitting Delta(0) to calculate th e value of strained-layer E-mv by simple algebraic operation. Obviously, it will be very convenient to calculate the valence band offset of heterojunc tion. The simplifed calculation scheme has the characteristic of small calc ulation amount and the calculation reliability can be improved by using the experimental value.