La-Zn doped M type Sr-ferrite thin films with various doping concentration
were prepared by conventional rf diode sputtering. La-Zn doping reduces the
grain growth rate, so that fine grains with mean grain size about 12nm wer
e prepared with superior magnetic properties. It is found that suitable amo
unt of La-Zn substitution may increase the M-s of the films, and modify the
temperature coefficient of coercivity, while H-c increases with increasing
concentration of La-Zn.