Semiconductor wafer bonding via liquid capillarity

Authors
Liau, ZL
Citation
Zl. Liau, Semiconductor wafer bonding via liquid capillarity, APPL PHYS L, 77(5), 2000, pp. 651-653
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
5
Year of publication
2000
Pages
651 - 653
Database
ISI
SICI code
0003-6951(20000731)77:5<651:SWBVLC>2.0.ZU;2-E
Abstract
Liquid surface tension has been used to pull different semiconductor wafers to very close contact and strong bonding. Bonded wafers, such as GaAs/GaP, were heat treated without pressure application to achieve wafer fusion. Th e bonding process has been analyzed, and criteria for surface tension, wafe r flatness, and elasticity have been derived. (C) 2000 American Institute o f Physics. [S0003-6951(00)03031-X].