X-ray photoelectron spectroscopy study of (NH4)(2)S-x-treated Mg-doped GaNlayers

Authors
Lin, YJ Tsai, CD Lyu, YT Lee, CT
Citation
Yj. Lin et al., X-ray photoelectron spectroscopy study of (NH4)(2)S-x-treated Mg-doped GaNlayers, APPL PHYS L, 77(5), 2000, pp. 687-689
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
5
Year of publication
2000
Pages
687 - 689
Database
ISI
SICI code
0003-6951(20000731)77:5<687:XPSSO(>2.0.ZU;2-6
Abstract
We present here the passivation mechanism and the chemistry of an (NH4)(2)S -x-treated Mg-doped GaN surface examined by using x-ray photoelectron spect roscopy. The native oxide on the GaN surface can be removed by the (NH4)(2) S-x treatment process. The S atoms not only bond as elemental sulfur and di sulfides, but occupy nitrogen-related vacancies. (C) 2000 American Institut e of Physics. [S0003-6951(00)00231-X].