Atomic-scale analysis of CoFe/Cu and CoFe/NiFe interfaces

Citation
Dj. Larson et al., Atomic-scale analysis of CoFe/Cu and CoFe/NiFe interfaces, APPL PHYS L, 77(5), 2000, pp. 726-728
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
5
Year of publication
2000
Pages
726 - 728
Database
ISI
SICI code
0003-6951(20000731)77:5<726:AAOCAC>2.0.ZU;2-8
Abstract
Internal interfaces in metallic multilayers grown on planar silicon substra tes have been chemically analyzed with atomic resolution using three-dimens ional atom probe microscopy. The structure studied was a NiFe/CoFe/Cu/CoFe multilayer grown with (111) texture. Atom probe measurements across the NiF e/CoFe interfaces yield widths of 1.1 +/- 0.2 nm for NiFe grown on CoFe and 1.7 +/- 0.2 nm for CoFe grown on NiFe, The widths of interfaces between Co Fe and Cu layers vary as well, with values of 0.82 +/- 0.10 nm for CoFe gro wn on Cu, but only 0.47 +/- 0.15 nm for Cu grown on CoFe. In addition, the Fe concentration is enriched at the interface where Cu is grown on CoFe, an d depleted when CoFe is grown on Cu. These results indicate that the Fe seg regates to the surface during the deposition of CoFe so that the compositio n at the top of this layer is Fe rich. (C) 2000 American Institute of Physi cs. [S0003-6951(00)02629-2].