We demonstrate a GaN/W/W-oxide metal base transistor (MBT) whose collector
is formed by oxidizing the intrinsic W base. The thickness of the nonoxidiz
ed intrinsic base of the fabricated collector-up MBT on a sapphire substrat
e was estimated to be 2-3 nm. Although the MBT showed large leakage, subtra
ction of the leakage from collector cut-rent revealed that the transistor h
ad a very large small-signal direct current (dc) current gain of 87 dB and
a de power gain of 50 dB. This indicates that the GaN-based MBT is a possib
le candidate for microwave and millimeterwave amplifiers as well as for hig
h-speed integrated circuits used in optical fiber communication system. (C)
2000 American Institute of Physics. [S0003-6951(00)04231-5].