Observation of an enhanced N 1s shake-up satellite on nitrided Si(100) andcorrelation with N bonding geometry

Authors
Bater, C Sanders, M Craig, JH Pannell, KH Wang, PW
Citation
C. Bater et al., Observation of an enhanced N 1s shake-up satellite on nitrided Si(100) andcorrelation with N bonding geometry, APPL SURF S, 161(3-4), 2000, pp. 328-332
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
161
Issue
3-4
Year of publication
2000
Pages
328 - 332
Database
ISI
SICI code
0169-4332(200007)161:3-4<328:OOAEN1>2.0.ZU;2-B
Abstract
Si(100) dosed with NO and thermally nitrided with ammonia was investigated by X-ray photoelectron spectroscopy (XPS) and high-resolution electron ener gy loss spectroscopy (HREELS) fura wide range of temperatures. A 410-eV pea k was observed in the N Is XPS spectrum region. It is proposed to be an enh anced shake-up satellite of the N Is photoelectrons. The temperature depend ence of both this peak and HREELS data suggests that precursor silicon nitr ides such as planar and pyramidal Si3N species as well as Si3N4 can form at different temperatures. (C) 2000 Elsevier Science B.V. All rights reserved .