Effects of surface disorder on the surface stress of Si(100) during oxidation

We have studied the effects of disorder on surface stress during oxidation. The surface stress change during ion bombardment and the following plasma oxidation on Si(100) was measured by means of an optical microcantilever te chnique. We have found compressive stress on Si surface due to disorder ind uced by ion bombardment and determined it quantitatively in terms of the nu mber of defects. This disorder-induced compressive stress was completely re laxed by the plasma oxidation processes. The initial evolution of the surfa ce stress during oxidation on bombarded surfaces is quite different from th at on unbombarded Si(100) surfaces. (C) 2000 Elsevier Science B.V. All righ ts reserved.