Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device

To conduct Young's double slit experiment using a semiconductor, fabricatio n techniques for 80 to 100-nm-period fine electrodes with 30 to 40-nm thick ness are reported. To obtain a resist pattern suitable for the lift-process , we used a double-layer resist with ZEP-520 and PMMA. The mixing of C-60 i nto both layers and rinsing by perfluorohexane (PFH) prevented pattern coll apse. As a result, a Au/Cr pattern with a 80-nm period over 30-nm steps was obtained. Using the developed process, we fabricated a device for observin g the interference pattern. Unfortunately, the collector current from each electrode was not uniform. Moreover, the current showed anomalous behavior. The current occasionally converged in two different points and sudden jump s from the lower converged point to the upper converged point were also obs erved in time-dependent measurements. Such anomalous behavior might be expl ained in terms of a change in the ionization of an impurity near the metal- semiconductor interface. (C) 2000 Elsevier Science B.V. All rights reserved .