Characterization of the buried interface in a Ni (film) /3C-SiC (substrate) system using SXES

Authors
Mihara, I An, ZL Kinoshita, A Hirai, M Kusaka, M Iwami, M
Citation
I. Mihara et al., Characterization of the buried interface in a Ni (film) /3C-SiC (substrate) system using SXES, APPL SURF S, 159, 2000, pp. 197-200
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
159
Year of publication
2000
Pages
197 - 200
Database
ISI
SICI code
0169-4332(200006)159:<197:COTBII>2.0.ZU;2-Q
Abstract
We investigated the interface reaction between Ni (film) and 3C-SiC (substr ate) after heat treatment by soft X-ray emission spectroscopy (SXES). Si at oms were found to react with Ni atoms at the interface by heat treatment at 600-800 degrees C. The reacted product was identified as Ni2Si. Carbon ato ms are concluded to be in a graphite-like state in the reacted film from th e spectral shape of the CKalpha. Those carbon atoms were found to be distri buted around the interface region. (C) 2000 Elsevier Science B.V. All right s reserved.