ESR characterization of the top Si layer of ion implanted SIMOX

Electron spin resonance (ESR) method was used to investigate defects produc ed in SIMOX by As+ and B+ ion implantation. Two kinds of paramagnetic defec t centers were observed. One had a g-value of 2.0055 and Delta H-pp = 7.0 O e, due to a-center, which originated from Si dangling bonds at the amorphou s layer. The other had a g-value of 2.0010 and Delta H-pp = 2.8 Oe, due to E'-center in the SiO2 layer. These centers showed different annealing prope rties. The existence of an amorphous/crystalline layer at the top Si layer plays an important role for the recrystallization mechanism. However, recry stallization at the moving crystalline layer by annealing depends highly on the ion species as well as the implantation energy. (C) 2000 Elsevier Scie nce B.V. All rights reserved.