Study of sublattice inversion in GaAs/Ge/GaAs(001) crystal by X-ray diffraction

Authors
Nakatani, S Kusano, S Takahashi, T Hirano, K Koh, S Kondo, T Ito, R
Citation
S. Nakatani et al., Study of sublattice inversion in GaAs/Ge/GaAs(001) crystal by X-ray diffraction, APPL SURF S, 159, 2000, pp. 256-259
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
159
Year of publication
2000
Pages
256 - 259
Database
ISI
SICI code
0169-4332(200006)159:<256:SOSIIG>2.0.ZU;2-8
Abstract
The structures of GaAs/Ge/GaAs(001) crystals designed for prototypes of non linear optical devices were investigated by X-ray diffraction (XRD). The in tensity distribution of crystal truncation rod (CTR) scattering showed that the quality of GaAs epitaxial layers is good. The results of X-ray standin g wave (XSW) measurements clearly indicated that the 90 degrees rotation of the epitaxial layers, which is a necessary condition for the phase matchin g, occurs. (C) 2000 Elsevier Science B.V. An rights reserved.