MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

In order to build a numerical model for the growth of ternary (InGaAs, InGa P) or quaternary materials (InGaAsP), data on growth rate and composition d istributions in a horizontal reactor have been collected. Samples were grow n from trimethylindium, trimethylgallium, tert-butylarsine and tert-butylph osphine. Composition analyses were carried out by X-ray photoelectron spect roscopy. The results are discussed in relation to preliminary simulation wo rks and a linear combination model based on experimental data for binary ma terials growth. The study enhances the understanding of growth mechanisms. Henceforth, modelling of InGaAsP growth seems possible but accurate simulat ion should take into account multicomponent diffusion and the enhancement o f precursors' decomposition occurring while mixed. (C) 2000 Elsevier Scienc e B.V. All rights reserved. PACS: 81.05.Ea; 81.15.Gh; 81.70.Jb; 82.80.Pv; 8 2.30.-b.