In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN

Atomic layer epitaxy (ALE) of cubic-GaN on GaAs(001) substrates is tried by alternate supply of GaCl and NH3, and the growth process is monitored in s itu using gravimetric monitoring (GM) method. It is found that one monolaye r (ML)/cycle growth of a pure cubic-GaN is possible when the growth is perf ormed at 400 degrees C on 25-nm-thick GaN buffer layer/GaAs(001) substrate. On the other hand, three-dimensional (3D) growth occurs when the growth is performed directly on GaAs substrate, and crystallinity of the grown layer is amorphous. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 81 .05.Ea; 81.10.Bk, 81.15.-z; 68.55.Jk.